What

IRSP 2019

When

November 4-6

Where

San Jose State University,

San Jose, CA

Contact Us

Dr. Valeriy Sukharev – valeriy_sukharev@mentor.com

Prof. Hiu-Yung Wong – hiuyung.wong@sjsu.edu

Dr. Xiaopeng Xu – xiaopeng.xu@synopsys.com

© 2019 by IRSP. Designed by Krish.

The conference will consist of formally invited presentation sessions and poster sessions for contributed papers. The poster papers will cover new developments addressing the thermal-mechanical aspects of reliability of materials, devices, circuits, packaging and systems.

Scope of the Conference

Future success of the industry depends on the ability to ensure that customer expectations for reliability are fully met throughout the life of the product. Proper thermal and stress budgeting has always been and will continue to be paramount to the success of the microelectronics industry in designing and manufacturing next generation electronics. It includes such products as 3D IC based on heterogeneous integration of functionally diverse components, spin-based circuits, human-machine interfaces, neuromorphic and quantum computing paradigms. Thermal-mechanical reliability must be optimized and designed into products and processes using advanced physics-based models and reliability-aware design methodologies.

Reliabilities of new emerging electronic materials and devices operating in harsh and extreme environments become ever more challenging. Next generation of energy storage materials that are both smart and sustainable, flexible electronics for stretchable and wearable devices and technologies - these are just a few examples of new areas to be explored. Mechanics aspects of the next generation of batteries have recently demonstrated the importance of accounting for the coupling between mechanics and electrochemistry in the design of electrode materials for future Li-ion battery technology.

IRSP 2019 calls for papers in all these areas of cutting-edge research and development.

 

FOCUS AREAS:

 

  • Thermal-mechanical aspects of circuit reliability, including aging simulation and time-to-failure assessment, and design for reliability.

 

  • TCAD-based modeling of stress and thermal issues in advanced logic and memory devices, chips, packages, and 3D integrations.

 

  • Mechanical and reliability issues for smart and energy conversion materials, flexible or stretchable electronics.

 

  • Reliability of new materials for advanced interconnects, devices and packages.

 

  • Advanced characterization techniques for interconnect failure analysis; characterization methods for strain mapping at the local scale.

 

Topics of interests

  • Degradation mechanisms and failures in advanced device and interconnect systems.

  • Effect of high frequencies and harsh environments on interconnect reliability.

  • Stress-related issues for advanced nonvolatile memories, including embedded phase-change memory.

  • Stress and thermal effects in advanced packaging, heterogeneous integration, and chip-package interaction.

  • Compact modeling and statistical methods in circuit/device life-time assessment.

  • Thermal and stress-driven floor-planning methodology, stress mitigation techniques, and design technology co-optimization.

  • Radiation hardness of memories (SRAM, DRAM, novel memory) and devices.

  • Reliability of power devices.